MWI 50-06 A7
MWI 50-06 A7T
IGBT Modules
I C25
= 72 A
V CES
Sixpack
Short Circuit SOA Capability
Square RBSOA
13
= 600 V
V CE(sat) typ. = 1.9 V
Type:
MWI 50-06 A7
NTC - Option:
without NTC
1
2
5
6
9
10
16
15
T
NTC
MWI 50-06 A7T
with NTC
14
3
4
7
8
11
12
T
See outline drawing for pin arrangement
E72873
17
IGBTs
Features
NPT IGBT technology
Symbol
Conditions
Maximum Ratings
low saturation voltage
V CES
V GES
I C25
I C80
RBSOA
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
V GE = ± 15 V; R G = 22 Ω ; T VJ = 125°C
Clamped inductive load; L = 100 μH
600
± 20
72
50
I CM = 100
V CEK ≤ V CES
V
V
A
A
A
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
t SC
V CE = V CES ; V GE = ± 15 V; R G = 22 Ω ; T VJ = 125°C
10
μs
package with copper base plate
(SCSOA)
non-repetitive
Advantages
P tot
T C = 25°C
225
W
space savings
reduced protection circuits
Symbol
Conditions
Characteristic Values
package designed for wave soldering
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
Typical Applications
V CE(sat)
V GE(th)
I C = 50 A; V GE = 15 V; T VJ = 25°C
T VJ = 125°C
I C = 1 mA; V GE = V CE
4.5
1.9
2.2
2.4
6.5
V
V
V
AC motor control
AC servo and robot drives
power supplies
I CES
I GES
t d(on)
t r
t d(off)
t f
E on
E off
C ies
Q Gon
V CE = V CES ; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
V CE = 0 V; V GE = ± 20 V
Inductive load, T VJ = 125°C
V CE = 300 V; I C = 50 A
V GE = ±15 V; R G = 22 Ω
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 300V; V GE = 15 V; I C = 50 A
0.7
50
60
300
30
2.3
1.7
2800
120
0.6
200
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
R thJC
(per IGBT)
0.55 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2007 IXYS All rights reserved
20070912a
1-4
相关PDF资料
MWI50-12A7T MOD IGBT SIXPACK RBSOA 1200V E2
MWI50-12T7T MOD IGBT SIX-PACK RBSOA E2
MWI60-06G6K MOD IGBT SIX-PACK RBSOA E1
MWI60-12T6K MOD IGBT SIXPACK RBSOA 1200V E1
MWI75-06A7T MOD IGBT SIXPACK RBSOA 600V E2
MWI75-12A8 MOD IGBT SIXPACK RBSOA 1200V E3
MWI75-12T7T IGBT MOD TRENCH SIX-PACK E3
MWI75-12T8T IGBT MOD TRENCH SIX-PACK E3
相关代理商/技术参数
MWI50-12A5 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:IGBT Modules Sixpack
MWI50-12A7 功能描述:分立半导体模块 50 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI50-12A7T 功能描述:IGBT 模块 50 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
MWI50-12E6K 功能描述:分立半导体模块 50 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI50-12E7 功能描述:分立半导体模块 50 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI50-12T7T 功能描述:分立半导体模块 50 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI60-06G6K 功能描述:分立半导体模块 60 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MWI60-12T6K 功能描述:分立半导体模块 60 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: